SSM3J112TU,LF

Active

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 1.1A UFM

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 1.1A UFM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J112TU,LF

Current - Continuous Drain (Id) @ 25°C	1.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Mounting Type	Surface Mount
Operating Temperature	150 °C
Rds On (Max) @ Id, Vgs	390 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs(th) (Max) @ Id	Mounting Type	Technology	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM3J112TU,LF	20 V	30 V	1.1 A	P-Channel	UFM	150 °C	4 V	10 V	1.8 V	Surface Mount	MOSFET (Metal Oxide)	390 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 1.1A (Ta) 800mW (Ta) Surface Mount UFM

Technical documentation and resources