AS3D020065A

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650V,20A SILICON CARBIDE SCHOTTK

Active

650V,20A SILICON CARBIDE SCHOTTK

Description

General part information

Diode 650 V 56A Through Hole TO-220-2

Parameters and characteristics for this part

Specification	AS3D020065A

Capacitance	1190 pF
Current - Average Rectified (Io)	56 A
Current - Reverse Leakage	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	TO-220-2
Package Name	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.65 V

Part	Capacitance	Technology	Voltage - Forward (Vf) (Max)	Package / Case	Package Name	Reverse Recovery Time (trr)	Current - Reverse Leakage	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Current - Average Rectified (Io)	Mounting Type	Voltage - DC Reverse (Vr) (Max)
ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D020065A	1190 pF	SiC (Silicon Carbide) Schottky	1.65 V	TO-220-2	TO-220-2	0 ns	20 µA	175 °C	-55 °C	500 mA	No Recovery Time	500 mA 500 mA	56 A	Through Hole	650 V

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