STW23NM60ND

Obsolete

STMicroelectronics

MOSFET N-CH 600V 19.5A TO247-3

Search across all available documentation for this part.

Obsolete

STMicroelectronics

MOSFET N-CH 600V 19.5A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW23NM60ND

Current - Continuous Drain (Id) @ 25°C	19.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds	2050 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature	Mounting Type	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology
STMicroelectronics STW23NM60N	10 V	600 V	N-Channel	150 °C	Through Hole	TO-247-3	150 W	60 nC	25 V	19 A	180 mOhm	TO-247-3	2050 pF	4 V	MOSFET (Metal Oxide)
STMicroelectronics STW23NM60ND	10 V	600 V	N-Channel	150 °C	Through Hole	TO-247-3	150 W	70 nC	25 V	19.5 A	180 mOhm	TO-247-3	2050 pF	5 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 19.5A (Tc) 150W (Tc) Through Hole TO-247-3

Technical documentation and resources

No documents available