Specification	STW23NM60ND

Current - Continuous Drain (Id) (Tc)	19.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	70 nC
Input Capacitance (Ciss) (Max)	2050 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Power Dissipation (Max)	150 W
Rds On (Max)	180 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	5 V

STW23N Series

Part	Package / Case	Technology	Vgs(th) (Max)	FET Type	Rds On (Max)	Gate Charge (Max)	Package Name	Vgs (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Mounting Type	Power Dissipation (Max)
STMicroelectronics STW23NM60N	TO-247-3	MOSFET (Metal Oxide)	4 V	N-Channel	180 mOhm	60 nC	TO-247-3	25 V	150 °C	600 V	10 V	19 A	2050 pF	Through Hole	150 W
STMicroelectronics STW23NM60ND	TO-247-3	MOSFET (Metal Oxide)	5 V	N-Channel	180 mOhm	70 nC	TO-247-3	25 V	150 °C	600 V	10 V	19.5 A	2050 pF	Through Hole	150 W
STMicroelectronics STW23NM50N	TO-247-3	MOSFET (Metal Oxide)	4 V	N-Channel	190 mOhm	45 nC	TO-247-3	25 V	150 °C	500 V	10 V	17 A	1330 pF	Through Hole	125 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources

No documents available