STTH212

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STMicroelectronics

DIODE GEN PURP 1.2KV 2A DO201AD

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STMicroelectronics

DIODE GEN PURP 1.2KV 2A DO201AD

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General part information

Diode 1200 V 2A Through Hole DO-201AD

Technical documentation and resources

Specification	STTH212	STTH21 Series

Current - Average Rectified (Io)	2 A	2 A
Current - Reverse Leakage @ Vr	10 µA	10 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	175 °C	175 °C
Package / Case	DO-201AD, Axial	DO-201AD, Axial
Reverse Recovery Time (trr)	75 ns	75 ns
Speed	200 mA, 500 ns	200 - 500 mA
Supplier Device Package	DO-201AD	DO-201AD
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.75 V	1.75 V

Part	Supplier Device Package	Mounting Type	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Technology	Reverse Recovery Time (trr)	Package / Case	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr
STMicroelectronics STTH212	DO-201AD	Through Hole	175 °C	1.2 kV	200 mA, 500 ns	Standard	75 ns	DO-201AD, Axial	2 A	1.75 V	10 µA
STMicroelectronics STTH212RL	DO-201AD	Through Hole	175 °C	1.2 kV	200 mA, 500 ns	Standard	75 ns	DO-201AD, Axial	2 A	1.75 V	10 µA