BSO033N03MSGXUMA1

Infineon Technologies

MOSFET N-CH 30V 17A 8DSO

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Infineon Technologies

MOSFET N-CH 30V 17A 8DSO

Technical Specifications

Parameters and characteristics for this part

Specification	BSO033N03MSGXUMA1

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	124 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	9600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.56 W
Rds On (Max) @ Id, Vgs	3.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Package / Case	Package / Case [y]	Package / Case [x]
Infineon Technologies BSO033N03MSGXUMA1	9600 pF	4.5 V 10 V	17 A	2 V	124 nC	-55 °C	150 °C	20 V	30 V	Surface Mount	N-Channel	3.3 mOhm	1.56 W	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in

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General part information

N-Channel 30 V 17A (Ta) 1.56W (Ta) Surface Mount PG-DSO-8

Technical documentation and resources

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