5LN01SS-TL-E

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Sanyo

N-CHANNEL SILICON MOSFET

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Sanyo

N-CHANNEL SILICON MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	5LN01SS-TL-E

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.57 nC
Input Capacitance (Ciss) (Max) @ Vds	6600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-81
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	7.8 Ohm
Supplier Device Package	3-SSFP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V

N-CHANNEL SILICON MOSFET

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature	Technology	Mounting Type	Power Dissipation (Max) [Max]	FET Type
Sanyo 5LN01SS-TL-E	50 V	100 mA	10 V	1.57 nC	7.8 Ohm	3-SSFP	4 V	1.5 V	6600 pF	SC-81	150 °C	MOSFET (Metal Oxide)	Surface Mount	150 mW	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3806	$ 0.08

General part information

N-Channel 50 V 100mA (Ta) 150mW (Ta) Surface Mount 3-SSFP

Technical documentation and resources

No documents available