JAN2N6277

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Microchip Technology

BIPOLAR TRANSISTORS - BJT 150V 50A NPN POWER BJT THT

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JAN2N6277

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Microchip Technology

BIPOLAR TRANSISTORS - BJT 150V 50A NPN POWER BJT THT

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Description Specifications Series Pricing CAD Documents

Description

General part information

JAN2N6277-Transistor Series

This specification covers the performance requirements for NPN silicon, power, 2N6274 and 2N6277 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/514.

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N6277

Current - Collector (Ic) (Max)	50 A
Current - Collector Cutoff (Max)	50 µA
DC Current Gain (hFE) (Min)	30
Grade	Military
Mounting Type	Through Hole
Operating Temperature (Max)	200 °C
Operating Temperature (Min)	-65 °C
Package / Case	TO-3, TO-204AA
Package Name	TO-3 (TO-204AA)
Power - Max	250 VA
Qualification	MIL-PRF-19500, 514
Transistor Type	NPN
Vce Saturation (Max)	3 V
Voltage - Collector Emitter Breakdown (Max)	150 V

JAN2N6277-Transistor Series

NPN Silicon Power 150V, 50A

Part	Power - Max	Package Name	Grade	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Qualification	DC Current Gain (hFE) (Min)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Collector Cutoff (Max)	Vce Saturation (Max)	Transistor Type	Current - Collector (Ic) (Max)
Microchip Technology JAN2N6277	250 VA	TO-3 (TO-204AA)	Military	150 V	TO-204AA TO-3	514 MIL-PRF-19500	30	Through Hole	-65 °C	200 °C	50 µA	3 V	NPN	50 A

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Product Change Notice EN

2N6274 and 2N6277