AS3D040120P2

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ANBON SEMICONDUCTOR (INT'L) LIMITED

DIODE ARR SIC 1200V 52A TO247-3

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ANBON SEMICONDUCTOR (INT'L) LIMITED

DIODE ARR SIC 1200V 52A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	AS3D040120P2

Current - Average Rectified (Io) (per Diode)	52 A
Current - Reverse Leakage @ Vr	20 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

DIODE ARR SIC 1200V 52A TO247-3

Part	Supplier Device Package	Speed	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Package / Case	Technology
ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D040120P2	TO-247-3	No Recovery Time	20 µA	52 A	175 ░C	-55 C	0 ns	1 Pair Common Cathode	1.2 kV	1.8 V	Through Hole	TO-247-3	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 1200 V 52A (DC) Through Hole TO-247-3

Technical documentation and resources