AS3D040120P2

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DIODE ARR SIC 1200V 52A TO247-3

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DIODE ARR SIC 1200V 52A TO247-3

Description

General part information

Diode Array 1 Pair Common Cathode 1200 V 52A (DC) Through Hole TO-247-3

Parameters and characteristics for this part

Specification	AS3D040120P2

Current - Average Rectified (Io) (per Diode)	52 A
Current - Reverse Leakage	20 µA
Diode Configuration	Common Cathode
Diode Pair Count	1 pair
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Voltage - Forward (Vf) (Max)	1.8 V

Part	Technology	Mounting Type	Current - Average Rectified (Io) (per Diode)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Voltage - DC Reverse (Vr) (Max)	Reverse Recovery Time (trr)	Package / Case	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Package Name	Diode Pair Count	Diode Configuration	Current - Reverse Leakage	Voltage - Forward (Vf) (Max)
ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D040120P2	SiC (Silicon Carbide) Schottky	Through Hole	52 A	500 mA	No Recovery Time	500 mA 500 mA	1200 V	0 ns	TO-247-3	175 °C	-55 °C	TO-247-3	1 pair	Common Cathode	20 µA	1.8 V

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