IXFE48N50Q

Obsolete

IXYS

MOSFET N-CH 500V 41A SOT-227B

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Obsolete

IXYS

MOSFET N-CH 500V 41A SOT-227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFE48N50Q

Current - Continuous Drain (Id) @ 25°C	41 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC
Input Capacitance (Ciss) (Max) @ Vds	7000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	400 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Power Dissipation (Max) [Max]	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Mounting Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
IXYS IXFE48N50Q	400 W	N-Channel	110 mOhm	10 V	4 V	7000 pF	MOSFET (Metal Oxide)	20 V	Chassis Mount	SOT-227B	150 °C	-40 °C	500 V	SOT-227-4 miniBLOC	41 A	190 nC
IXYS IXFE48N50QD3	400 W	N-Channel	110 mOhm	10 V	4 V		MOSFET (Metal Oxide)	20 V	Chassis Mount	SOT-227B	150 °C	-40 °C	500 V	SOT-227-4 miniBLOC	41 A	190 nC	8000 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 41A (Tc) 400W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available