STWA45N65M5

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STMicroelectronics

TRANS MOSFET N-CH 650V 35A 3-PIN TO-247 TUBE

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STWA45N65M5

Active

STMicroelectronics

TRANS MOSFET N-CH 650V 35A 3-PIN TO-247 TUBE

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STWA45N65M5

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	82 nC
Input Capacitance (Ciss) (Max) @ Vds	3470 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	210 W
Rds On (Max) @ Id, Vgs	78 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STWA45 Series

TRANS MOSFET N-CH 650V 35A 3-PIN TO-247 TUBE

Part	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)
STMicroelectronics STWA45N65M5	Through Hole	650 V	5 V	25 V	TO-247	TO-247-3	78 mOhm	N-Channel	150 °C	82 nC	35 A	10 V	3470 pF	MOSFET (Metal Oxide)	210 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 6.82
		90	$ 6.10
		300	$ 5.74
		750	$ 5.38
		1500	$ 4.85
Newark	Each	1	$ 8.42
		10	$ 7.32
		25	$ 5.25
		50	$ 4.89
		100	$ 4.61
		250	$ 4.45

Description

General part information

STWA45 Series

These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.Worldwide best RDS(on)* areaHigher VDSSrating and high dv/dt capabilityExcellent switching performance100% avalanche tested