IXFC74N20P

Obsolete

IXYS

MOSFET N-CH 200V 35A ISOPLUS220

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Obsolete

IXYS

MOSFET N-CH 200V 35A ISOPLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFC74N20P

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	107 nC
Input Capacitance (Ciss) (Max) @ Vds	3300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUS220™
Power Dissipation (Max)	120 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	FET Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)
IXYS IXFC74N20P	3300 pF	20 V	Through Hole	36 mOhm	200 V	MOSFET (Metal Oxide)	N-Channel	ISOPLUS220™	-55 °C	175 ░C	107 nC	35 A	ISOPLUS220™	10 V	5 V	120 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 35A (Tc) 120W (Tc) Through Hole ISOPLUS220™

Technical documentation and resources

No documents available