APT15GP60BDLG

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Microsemi Corporation

IGBT PT 600V 56A TO247

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Microsemi Corporation

IGBT PT 600V 56A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	APT15GP60BDLG

Current - Collector (Ic) (Max) [Max]	56 A
Current - Collector Pulsed (Icm)	65 A
Gate Charge	55 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	250 W
Supplier Device Package	TO-247
Switching Energy	130 µJ, 121 µJ
Td (on/off) @ 25°C	8 ns, 29 ns
Test Condition	15 A, 400 V, 5 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Switching Energy	Power - Max [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Mounting Type	Gate Charge	Test Condition
Microsemi Corporation APT15GP60BDLG	2.7 V	8 ns 29 ns	121 µJ 130 µJ	250 W	TO-247-3	600 V	-55 °C	150 °C	PT	TO-247	56 A	65 A	Through Hole	55 nC	5 Ohm 15 A 15 V 400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT PT 600 V 56 A 250 W Through Hole TO-247

Technical documentation and resources

No documents available