TSM036N03PQ56 RLG

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Taiwan Semiconductor Corporation

MOSFET N-CH 30V 124A 8PDFN

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Taiwan Semiconductor Corporation

MOSFET N-CH 30V 124A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM036N03PQ56 RLG

Current - Continuous Drain (Id) @ 25°C	124 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2530 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	3.6 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]
Taiwan Semiconductor Corporation TSM036N03PQ56 RLG	50 nC	MOSFET (Metal Oxide)	8-PDFN (5x6)	N-Channel	83 W	2.5 V	20 V	Surface Mount	30 V	3.6 mOhm	-55 °C	150 °C	4.5 V 10 V	124 A	8-PowerTDFN	2530 pF

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General part information

N-Channel 30 V 124A (Tc) 83W (Tc) Surface Mount 8-PDFN (5x6)

Technical documentation and resources