IXTP18N60PM

Obsolete

IXYS

MOSFET N-CH 600V 9A TO220

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Obsolete

IXYS

MOSFET N-CH 600V 9A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP18N60PM

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs [Max]	420 mOhm
Supplier Device Package	TO-220 Isolated Tab
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)
IXYS IXTP18N60PM	90 W	TO-220 Isolated Tab	9 A	MOSFET (Metal Oxide)	TO-220-3 Full Pack Isolated Tab	N-Channel	Through Hole	-55 °C	150 °C	420 mOhm	10 V	10 V 49 nC	2500 pF	5.5 V	600 V	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 9A (Tc) 90W (Tc) Through Hole TO-220 Isolated Tab

Technical documentation and resources

No documents available