TK25A60X,S5X

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 25A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 25A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK25A60X,S5X

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.5 V

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
Toshiba Semiconductor and Storage TK25A60X,S5X	TO-220SIS	3.5 V	125 mOhm	25 A	MOSFET (Metal Oxide)	150 °C	30 V	2400 pF	TO-220-3 Full Pack	10 V	N-Channel	600 V	45 W	40 nC	Through Hole

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General part information

N-Channel 600 V 25A (Ta) 45W (Tc) Through Hole TO-220SIS

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