IPD035N06L3GATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 60V 90A TO252-3

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Obsolete

Infineon Technologies

MOSFET N-CH 60V 90A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD035N06L3GATMA1

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	79 nC
Input Capacitance (Ciss) (Max) @ Vds	13000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	167 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package
Infineon Technologies IPD035N06L3GATMA1	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 ░C	N-Channel	20 V	167 W	79 nC	Surface Mount	90 A	2.2 V	MOSFET (Metal Oxide)	4.5 V 10 V	13000 pF	60 V	3.5 mOhm	PG-TO252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 90A (Tc) 167W (Tc) Surface Mount PG-TO252-3

Technical documentation and resources