STH400N4F6-2

Obsolete

STMicroelectronics

MOSFET N-CH 40V 180A H2PAK-2

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Obsolete

STMicroelectronics

MOSFET N-CH 40V 180A H2PAK-2

Technical Specifications

Parameters and characteristics for this part

Specification	STH400N4F6-2

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	404 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	300 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.15 mOhm
Supplier Device Package	H2Pak-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Grade	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology
STMicroelectronics STH400N4F6-6	Automotive	180 A	H2PAK-6	D2PAK TO-263-7	AEC-Q101	-55 °C	175 ░C	1.15 mOhm	4.5 V	10 V	404 nC	300 W	Surface Mount	N-Channel	40 V	20 V	MOSFET (Metal Oxide)
STMicroelectronics STH400N4F6-2	Automotive	180 A	H2Pak-2	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	-55 °C	175 ░C	1.15 mOhm	4.5 V	10 V	404 nC	300 W	Surface Mount	N-Channel	40 V	20 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 180A (Tc) 300W (Tc) Surface Mount H2PAK-2

Technical documentation and resources