CCS15S30,L3IDTF

Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1.5A CST2C

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Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1.5A CST2C

Technical Specifications

Parameters and characteristics for this part

Specification	CCS15S30,L3IDTF

Capacitance @ Vr, F	200 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	2-SMD, No Lead
Speed	200 mA, 500 ns
Supplier Device Package	CST2C
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	400 mV

Part	Current - Average Rectified (Io)	Package / Case	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Speed	Capacitance @ Vr, F	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package
Toshiba Semiconductor and Storage CCS15S30,L3IDTF	1.5 A	2-SMD No Lead	Schottky	500 µA	Surface Mount	200 mA 500 ns	200 pF	125 °C	400 mV	20 V	CST2C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 20 V 1.5A Surface Mount CST2C

Technical documentation and resources