Specification	SIR464DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	95 nC
Input Capacitance (Ciss) (Max)	3545 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	69 W, 5.2 W
Rds On (Max)	3.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SIR464 Series

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Technology	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Package / Case	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Rds On (Max)	Package Name	FET Type
Vishay Dale SIR464DP-T1-GE3	5.2 W 69 W	30 V	3545 pF	MOSFET (Metal Oxide)	95 nC	10 V	4.5 V	2.5 V	PowerPAK® SO-8	Surface Mount	-55 °C	150 °C	50 A	20 V	3.1 mOhm	PowerPAK® SO-8	N-Channel

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