Specification	IPP65R110CFDXKSA1

Current - Continuous Drain (Id) (Tc)	31.2 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	118 nC
Input Capacitance (Ciss) (Max)	3240 pF, 3240 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	PG-TO220-3
Power Dissipation (Max)	277.8 W
Rds On (Max)	110 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IPP65R110 Series

Part	Mounting Type	Package Name	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	FET Type	Input Capacitance (Ciss) (Max)	Technology	Vgs (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Qualification	Grade
INFINEON IPP65R110CFDXKSA1	Through Hole	PG-TO220-3	700 V	277.8 W	4.5 V	10 V	118 nC	31.2 A	110 mOhm	N-Channel	3240 pF 3240 pF	MOSFET (Metal Oxide)	20 V	TO-220-3	-55 °C	150 °C
INFINEON IPP65R110CFDAAKSA1	Through Hole	PG-TO220-3	650 V	277.8 W	4.5 V	10 V	118 nC	31.2 A	110 mOhm	N-Channel	3240 pF 3240 pF	MOSFET (Metal Oxide)	20 V	TO-220-3	-40 °C	150 °C	AEC-Q101	Automotive
INFINEON IPP65R110CFDXKSA2	Through Hole	PG-TO220-3	650 V	277.8 W	4.5 V	10 V	118 nC	31.2 A	110 mOhm	N-Channel	3240 pF 3240 pF	MOSFET (Metal Oxide)	20 V	TO-220-3	-55 °C	150 °C

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