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INFINEON IKFW50N65ES5XKSA1

IKFW40N65ES5XKSA1

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INFINEON

THE IKFW40N65ES5 IS A 650 V, 40 A IGBT DISCRETE WITH ANTI-PARALLEL DIODE IN TO-247 ADVANCED ISOLATION PACKAGE

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INFINEON IKFW50N65ES5XKSA1

IKFW40N65ES5XKSA1

Active
INFINEON

THE IKFW40N65ES5 IS A 650 V, 40 A IGBT DISCRETE WITH ANTI-PARALLEL DIODE IN TO-247 ADVANCED ISOLATION PACKAGE

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Description

General part information

IKFW40 Series

Hard-switching 650 V, 40 ATRENCHSTOP™ 5 S5IGBT discrete in TO-247advanced isolationpackage addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but easy design-in, faster time-to-market cycles and simplification of circuit design. This package eliminates the need of isolation material and enables high power density, the best thermal performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink.

Technical Specifications

Parameters and characteristics for this part

SpecificationIKFW40N65ES5XKSA1
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)120 A
Gate Charge70 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseTO-247-3
Package NamePG-HSIP247-3-2
Power - Max106 W
Reverse Recovery Time (trr)75 ns
Switching Energy (Off)320 µJ
Switching Energy (On)560 µJ
Td (off) @ 25°C124 ns
Td (on) @ 25°C17 ns
Test Condition Current30 A
Test Condition Resistance13 Ohm
Test Condition Voltage400 V
Test Condition Voltage (Secondary)15 V
Vce(on) (Max)1.7 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

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