IXTY01N80

Obsolete

IXYS

MOSFET N-CH 800V 100MA TO252AA

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 800V 100MA TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXTY01N80

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Input Capacitance (Ciss) (Max) @ Vds	60 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	50 Ohm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology
IXYS IXTY01N80	TO-252AA	-55 °C	150 °C	100 mA	N-Channel	20 V	50 Ohm	4.5 V	800 V	Surface Mount	8 nC	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	25 W	60 pF	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 100mA (Tc) 25W (Tc) Surface Mount TO-252AA

Technical documentation and resources

No documents available