Specification	RSD050N10TL

Current - Continuous Drain (Id) (Ta)	5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	14 nC
Input Capacitance (Ciss) (Max)	530 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	CPT3
Power Dissipation (Max)	15 W
Rds On (Max)	190 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

RSD050N10 Series

Part	Vgs (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max)	Package Name	Current - Continuous Drain (Id) (Ta)	FET Type	Vgs(th) (Max)	Package / Case	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Input Capacitance (Ciss) (Max)	Technology	Gate Charge (Max)	Mounting Type
Rohm Semiconductor RSD050N10TL	20 V	150 °C	100 V	15 W	190 mOhm	CPT3	5 A	N-Channel	2.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V	10 V	530 pF	MOSFET (Metal Oxide)	14 nC	Surface Mount

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