Specification	SSM6L36FE,LM

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	330 mA
Current - Continuous Drain (Id) (Typical)	500 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Max)	1.23 nC
Input Capacitance (Ciss) (Max)	46 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Package Name	ES6
Power - Max	150 mW
Rds On (Max)	630 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

SSM6L36FE Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.5 A/-0.33 A, 0.66 Ω@4.5V/1.31 Ω@4.5V, SOT-563(ES6)

Part	Vgs(th) (Max)	Rds On (Max)	FET Feature	Drain to Source Voltage (Vdss)	Configuration	Operating Temperature	Package Name	Input Capacitance (Ciss) (Max)	Package / Case	Power - Max	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	Gate Charge (Max)	Technology	Mounting Type
Toshiba Semiconductor and Storage SSM6L36FE,LM	1 V	630 mOhm	Logic Level Gate	20 V	N P-Channel	150 °C	ES6	46 pF	SOT-563 SOT-666	150 mW	500 mA	330 mA	1.23 nC	MOSFET (Metal Oxide)	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources