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Description

General part information

PBSS4160 Series

NPN/PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4160TVL
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)250
Frequency - Transition220 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameTO-236AB
Power - Max400 mW
Transistor TypeNPN
Vce Saturation (Max)250 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

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CAD

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Documents

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