BUK764R2-80E,118

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Nexperia USA Inc.

N-CHANNEL TRENCHMOS STANDARD LEVEL FET

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BUK764R2-80E,118

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Nexperia USA Inc.

N-CHANNEL TRENCHMOS STANDARD LEVEL FET

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK764R2-80E Series

Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK764R2-80E,118

Current - Continuous Drain (Id) (Tc)	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	136 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	10426 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Power Dissipation (Max)	324 W
Qualification	AEC-Q101
Rds On (Max)	4.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

BUK764R2-80E Series

N-channel TrenchMOS standard level FET

Part	Grade	Power Dissipation (Max)	Vgs(th) (Max)	FET Type	Rds On (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Qualification	Gate Charge (Max)	Technology	Drain to Source Voltage (Vdss)
Nexperia USA Inc. BUK764R2-80E,118	Automotive	324 W	4 V	N-Channel	4.2 mOhm	10426 pF	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	-55 °C	175 °C	D2PAK	20 V	120 A	AEC-Q101	136 nC	MOSFET (Metal Oxide)	80 V