Specification	VS-GB150TH120N

Configuration	Half Bridge
Current - Collector (Ic) (Max)	300 A
Current - Collector Cutoff (Max)	5 mA
Input	Standard
Input Capacitance (Cies) @ Vce	11 nF
Mounting Type	Chassis Mount
Operating Temperature	150 °C
Package / Case	Double INT-A-PAK (3 + 4)
Package Name	Double INT-A-PAK
Pin Count (Side 1)	3
Pin Count (Side 2)	4 pins
Power - Max	1008 W
Vce(on) (Max)	2.35 V
Voltage - Collector Emitter Breakdown (Max)	1200 V

GB150 Series

Part	Vce(on) (Max)	Input Capacitance (Cies) @ Vce	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max)	Current - Collector (Ic) (Max)	Package Name	Configuration	Operating Temperature	Power - Max	Package / Case	Pin Count (Side 1)	Pin Count (Side 2)	Input	Operating Temperature (Min)	Operating Temperature (Max)	NTC Thermistor	IGBT Type
Vishay General Semiconductor - Diodes Division VS-GB150TH120N	2.35 V	11 nF	Chassis Mount	1200 V	5 mA	300 A	Double INT-A-PAK	Half Bridge	150 °C	1008 W	Double INT-A-PAK (3 + 4)	3	4 pins	Standard
Vishay General Semiconductor - Diodes Division VS-GB150YG120NT	4 V		Chassis Mount	1200 V	120 µA	182 A	ECONO3 4PACK	Full Bridge		892 W	Module			Standard	-55 °C	150 °C	Yes	NPT

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