Specification	VS-GT100TP120N

Configuration	Half Bridge
Current - Collector (Ic) (Max)	180 A
Current - Collector Cutoff (Max)	5 mA
IGBT Type	Trench
Input	Standard
Input Capacitance (Cies) @ Vce	12.8 nF
Mounting Type	Chassis Mount
Operating Temperature	175 °C
Package / Case	INT-A-PAK (3 + 4)
Package Name	INT-A-PAK
Pin Count (Side 1)	3
Pin Count (Side 2)	4 pins
Power - Max	652 W
Vce(on) (Max)	2.35 V, 2.35 V
Voltage - Collector Emitter Breakdown (Max)	1200 V

GT100 Series

Part	Current - Collector (Ic) (Max)	Package Name	Power - Max	IGBT Type	Configuration	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Input	Operating Temperature (Min)	Operating Temperature (Max)	Current - Collector Cutoff (Max)	Vce(on) (Max)	Input Capacitance (Cies) @ Vce	Pin Count (Side 2)	Pin Count (Side 1)	Operating Temperature
Vishay General Semiconductor - Diodes Division VS-GT100NA120UX	134 A	SOT-227	463 W	Trench	Single	Chassis Mount	miniBLOC SOT-227-4	1200 V	Standard	-40 °C	150 °C	100 µA	2.85 V
Vishay General Semiconductor - Diodes Division VS-GT100TP60N	160 A	INT-A-PAK	417 W	Trench	Half Bridge	Chassis Mount	INT-A-PAK (3 + 4)	600 V	Standard			5 mA	2.1 V	7.71 nF	4 pins	3	175 °C
Vishay General Semiconductor - Diodes Division VS-GT100TP120N	180 A	INT-A-PAK	652 W	Trench	Half Bridge	Chassis Mount	INT-A-PAK (3 + 4)	1200 V	Standard			5 mA	2.35 V 2.35 V	12.8 nF	4 pins	3	175 °C
Vishay General Semiconductor - Diodes Division VS-GT100LA65UF	94 A	SOT-227	230 W	Trench Field Stop	Single Chopper	Chassis Mount	miniBLOC SOT-227-4	650 V	Standard	-40 °C	175 °C	80 µA	2.1 V

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