Specification	IXTC200N10T

Current - Continuous Drain (Id) (Tc)	101 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	152 nC
Input Capacitance (Ciss) (Max)	9400 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	ISOPLUS220™
Package Name	ISOPLUS220™
Power Dissipation (Max)	160 W
Rds On (Max)	6.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4.5 V

IXTC200 Series

Part	Gate Charge (Max)	Rds On (Max)	Package Name	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Technology	Power Dissipation (Max)
LITTELFUSE IXTC200N10T	152 nC	6.3 mOhm	ISOPLUS220™	Through Hole	10 V	30 V	101 A	4.5 V	N-Channel	100 V	9400 pF	-55 °C	175 °C	ISOPLUS220™	MOSFET (Metal Oxide)	160 W

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