Specification	IRFL110TRPBF

Current - Continuous Drain (Id) (Tc)	1.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	8.3 nC
Input Capacitance (Ciss) (Max)	180 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-261AA, TO-261-4
Package Name	SOT-223
Power Dissipation (Max)	3.1 W, 2 W
Rds On (Max)	540 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFL110 Series

Part	Rds On (Max)	Technology	Package / Case	Gate Charge (Max)	FET Type	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Input Capacitance (Ciss) (Max)
Vishay Dale IRFL110PBF	540 mOhm	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	8.3 nC	N-Channel	20 V	-55 °C	150 °C	Surface Mount	1.5 A	4 V	100 V	2 W 3.1 W	10 V	SOT-223	180 pF
Vishay Dale IRFL110TRPBF	540 mOhm	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	8.3 nC	N-Channel	20 V	-55 °C	150 °C	Surface Mount	1.5 A	4 V	100 V	2 W 3.1 W	10 V	SOT-223	180 pF
Vishay Dale IRFL110TR	540 mOhm	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	8.3 nC	N-Channel	20 V	-55 °C	150 °C	Surface Mount	1.5 A	4 V	100 V	2 W 3.1 W	10 V	SOT-223	180 pF
Vishay Dale IRFL110TRPBF-BE3	540 mOhm	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	8.3 nC	N-Channel	20 V	-55 °C	150 °C	Surface Mount	1.5 A	4 V	100 V	2 W 3.1 W	10 V	SOT-223	180 pF

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