AOV11S60

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 650MA/8A 4DFN

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 650MA/8A 4DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AOV11S60

Current - Continuous Drain (Id) @ 25°C	8 A, 650 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	545 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-PowerTSFN
Power Dissipation (Max)	156 W, 8.3 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	4-DFN (8x8)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.1 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds
Alpha & Omega Semiconductor Inc. AOV11S60	11 nC	N-Channel	MOSFET (Metal Oxide)	8.3 W 156 W	10 V	-55 °C	150 °C	4.1 V	4-PowerTSFN	30 V	4-DFN (8x8)	Surface Mount	500 mOhm	600 V	8 A 650 mA	545 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	3500	$ 1.09

General part information

N-Channel 600 V 650mA (Ta), 8A (Tc) 8.3W (Ta), 156W (Tc) Surface Mount 4-DFN (8x8)

Technical documentation and resources