Description
General part information
IPL65R070 Series
650V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, server, telecom, UPS and solar.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPL65R070C7AUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 28 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 64 nC |
| Input Capacitance (Ciss) (Max) | 3020 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 4-PowerTSFN |
| Package Name | PG-VSON-4 |
| Power Dissipation (Max) | 169 W |
| Rds On (Max) | 70 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
IPL65R070C7
MOSFET some key facts about avalanche
MOSFET CoolMOS™ benefits in hard and soft switching SMPS topologies
MOSFET CoolMOS™ best-in-class RDSon per package products
FIT Report - IPL65R070C7
Si-SiC-GaN: Technology comparison of CoolMOS™ – CoolSiC™ – CoolGaN™
IPL65R070C7
Infineon-MA002172794-MaterialContentSheet-v01_00-EN
IPL65R070C7AUMA1 | Datasheet
