Specification	SQ3495EV-T1_GE3

Current - Continuous Drain (Id) (Tc)	8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	41 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	3950 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	5 W
Qualification	AEC-Q101
Rds On (Max)	21 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.4 V

SQ3495 Series

Part	Vgs (Max)	Qualification	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Technology	Package Name	Mounting Type	Current - Continuous Drain (Id) (Tc)	FET Type	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Grade	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SQ3495EV-T1_GE3	12 V	AEC-Q101	41 nC	30 V	MOSFET (Metal Oxide)	6-TSOP	Surface Mount	8 A	P-Channel	1.4 V	10 V	2.5 V	21 mOhm	Automotive	5 W	3950 pF	SOT-23-6 Thin TSOT-23-6	-55 °C	175 °C

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