Specification	SIB457EDK-T1-GE3

Current - Continuous Drain (Id) (Tc)	9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	44 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-75-6
Package Name	PowerPAK® SC-75-6
Power Dissipation (Max)	2.4 W, 13 W
Rds On (Max)	35 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SIB457 Series

Part	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Gate Charge (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Technology	Rds On (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale SIB457EDK-T1-GE3	2.4 W 13 W	-55 °C	150 °C	PowerPAK® SC-75-6	44 nC	1 V	20 V	8 V	PowerPAK® SC-75-6	MOSFET (Metal Oxide)	35 mOhm	Surface Mount	9 A	P-Channel	4.5 V

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