IXFP34N65X2M

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IXYS

MOSFET N-CH 650V 34A TO220

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IXYS

MOSFET N-CH 650V 34A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP34N65X2M

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3230 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-220 Isolated Tab
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXFP34N65X2M	N-Channel	100 mOhm	10 V	5 V	Through Hole	3230 pF	650 V	30 V	56 nC	MOSFET (Metal Oxide)	40 W	34 A	TO-220 Isolated Tab	TO-220-3 Full Pack Isolated Tab	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 3.89

General part information

N-Channel 650 V 34A (Tc) 40W (Tc) Through Hole TO-220 Isolated Tab

Technical documentation and resources

No documents available