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IDD06SG60CXTMA2

IDD06SG60CXTMA2

NRND
INFINEON

SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN III SERIES, SINGLE, 600 V, 6 A, 8 NC, TO-252 (DPAK)

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IDD06SG60CXTMA2

IDD06SG60CXTMA2

NRND
INFINEON

SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN III SERIES, SINGLE, 600 V, 6 A, 8 NC, TO-252 (DPAK)

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Description

General part information

IDD06SG60 Series

Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.

Technical Specifications

Parameters and characteristics for this part

SpecificationIDD06SG60CXTMA2
Capacitance130 pF
Current - Average Rectified (Io)6 A
Current - Reverse Leakage50 µA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max)2.3 V

Pricing

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CAD

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