CRS04(TE85L,Q,M)

Active

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A S-FLAT

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A S-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CRS04(TE85L,Q,M)

Capacitance @ Vr, F	47 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	100 çA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-123F
Speed	200 mA, 500 ns
Supplier Device Package	S-FLAT (1.6x3.5)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	510 mV

Part	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Average Rectified (Io)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Capacitance @ Vr, F	Supplier Device Package	Package / Case
Toshiba Semiconductor and Storage CRS04(TE85L,Q,M)	100 çA	510 mV	Schottky	1 A	Surface Mount	40 V	150 °C	-40 °C	200 mA 500 ns	47 pF	S-FLAT (1.6x3.5)	SOD-123F
Toshiba Semiconductor and Storage CRS04(TE85L)	100 çA	510 mV	Schottky	1 A	Surface Mount	40 V	150 °C	-40 °C	200 mA 500 ns		S-FLAT (1.6x3.5)	SOD-123F

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 40 V 1A Surface Mount S-FLAT (1.6x3.5)

Technical documentation and resources