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L6389ED - 8-SOIC

L6389ED

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STMicroelectronics

MOSFET DRVR 4-OUT HI/LO SIDE INV 8-PIN SOIC TUBE

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L6389ED - 8-SOIC

L6389ED

Active
STMicroelectronics

MOSFET DRVR 4-OUT HI/LO SIDE INV 8-PIN SOIC TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationL6389ED
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]400 mA
Current - Peak Output (Source, Sink) [custom]650 mA
Driven ConfigurationHalf-Bridge
High Side Voltage - Max (Bootstrap) [Max]600 V
Input TypeInverting
Logic Voltage - VIL, VIH1.1 V, 1.8 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-45 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]70 ns
Rise / Fall Time (Typ) [custom]40 ns
Supplier Device Package8-SOIC
Voltage - Supply [Max]17 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.85
10$ 1.19
25$ 1.01
100$ 0.81
250$ 0.72
500$ 0.66
2000$ 0.57
4000$ 0.57

Description

General part information

L6389E Series

The L6389E is a high voltage gate driver, manufactured with the BCD™ "offline" technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. Further prevention from outputs cross conduction is guaranteed by the deadtime function.

The L6389E device has two input and two output pins, and guarantees the outputs switch in phase with inputs. The logic inputs are CMOS/TTL compatible (3.3 V, 5 V and 15 V) to ease the interfacing with controlling devices.

The bootstrap diode is integrated in the driver allowing a more compact and reliable solution.