DG2617DN-T1-E4

Obsolete

Vishay General Semiconductor - Diodes Division

IC SWITCH SPDT X 2 7OHM 10DFN

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Obsolete

Vishay General Semiconductor - Diodes Division

IC SWITCH SPDT X 2 7OHM 10DFN

Technical Specifications

Parameters and characteristics for this part

Specification	DG2617DN-T1-E4

Channel Capacitance (CS(off), CD(off)) [custom]	9 pF
Channel Capacitance (CS(off), CD(off)) [custom]	9 pF
Channel-to-Channel Matching (ΔRon)	100 mOhm
Charge Injection	7 pC
Crosstalk	-80 dB
Current - Leakage (IS(off)) (Max) [Max]	2 nA
Mounting Type	Surface Mount
Multiplexer/Demultiplexer Circuit	2:1
Number of Circuits	2
On-State Resistance (Max) [Max]	7 Ohms
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	10-VFDFN Exposed Pad
Supplier Device Package	10-DFN (3x3)
Switch Circuit	SPDT
Switch Time (Ton, Toff) (Max) [custom]	69 ns
Switch Time (Ton, Toff) (Max) [custom]	39 ns
Voltage - Supply, Single (V+) [Max]	3.6 V
Voltage - Supply, Single (V+) [Min]	1.5 V

Part	Voltage - Supply, Single (V+) [Max]	Voltage - Supply, Single (V+) [Min]	Channel Capacitance (CS(off), CD(off)) [custom]	Channel Capacitance (CS(off), CD(off)) [custom]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Charge Injection	Multiplexer/Demultiplexer Circuit	Switch Circuit	Current - Leakage (IS(off)) (Max) [Max]	Number of Circuits	Package / Case	Switch Time (Ton, Toff) (Max) [custom]	Switch Time (Ton, Toff) (Max) [custom]	Mounting Type	On-State Resistance (Max) [Max]	Crosstalk	Channel-to-Channel Matching (ΔRon)
Vishay General Semiconductor - Diodes Division DG2617DN-T1-E4	3.6 V	1.5 V	9 pF	9 pF	10-DFN (3x3)	85 °C	-40 °C	7 pC	2:1	SPDT	2 nA	2	10-VFDFN Exposed Pad	69 ns	39 ns	Surface Mount	7 Ohms	-80 dB	100 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

2 Circuit IC Switch 2:1 7Ohm 10-DFN (3x3)

Technical documentation and resources