Specification	IPL60R299CPAUMA1

Current - Continuous Drain (Id) (Tc)	11.1 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	22 nC
Input Capacitance (Ciss) (Max)	1100 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	4-PowerTSFN
Package Name	PG-VSON-4
Power Dissipation (Max)	96 W
Rds On (Max)	299 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPL60R299 Series

Part	Gate Charge (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)
INFINEON IPL60R299CPAUMA1	22 nC	Surface Mount	11.1 A	20 V	3.5 V	10 V	PG-VSON-4	600 V	N-Channel	4-PowerTSFN	299 mOhm	-40 °C	150 °C	MOSFET (Metal Oxide)	1100 pF	96 W

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