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BSZ075N08NS5ATMA1

BSZ075N08NS5ATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; PQFN 3.3 X 3.3 PACKAGE; 7.5 MOHM;

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BSZ075N08NS5ATMA1

BSZ075N08NS5ATMA1

Active
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; PQFN 3.3 X 3.3 PACKAGE; 7.5 MOHM;

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Description

General part information

BSZ075 Series

Infineon’sOptiMOS™ 5 80Vindustrial power MOSFET BSZ084N08NS5 offers a RDS(on)reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification intelecomandserver power supplies. In addition, they can also be utilized in other industrial applications such assolar,low voltage drivesandadapters.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ075N08NS5ATMA1
Current - Continuous Drain (Id) (Tc)40 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)29.5 nC
Input Capacitance (Ciss) (Max)2080 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TSDSON-8-26
Power Dissipation (Max)69 W
Rds On (Max)7.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.8 V

Pricing

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