IXFR90N20

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IXYS

MOSFET N-CH 200V 90A ISOPLUS247

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IXYS

MOSFET N-CH 200V 90A ISOPLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFR90N20

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	200 V
FET Type	N-Channel
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	ISOPLUS247™
Technology	MOSFET (Metal Oxide)

Part	Mounting Type	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
IXYS IXFR90N20	Through Hole	N-Channel	ISOPLUS247™	200 V	TO-247-3	MOSFET (Metal Oxide)	90 A
IXYS IXFR90N30	Through Hole	N-Channel	ISOPLUS247™	300 V	TO-247-3	MOSFET (Metal Oxide)	75 A	20 V	417 W	4.5 V	10000 pF	10 V	-55 °C	150 °C	360 nC	33 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 90A (Tc) Through Hole ISOPLUS247™

Technical documentation and resources

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