Specification	IRF9910PBF

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Maximum)	12 A
Current - Continuous Drain (Id) (Typical)	10 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Max)	11 nC
Input Capacitance (Ciss) (Max)	900 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SO, 8-SOIC
Package Width	3.9 mm
Power - Max	2 VA
Rds On (Max)	13.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.55 V

IRF99 Series

Part	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	Power - Max	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Package Name	Mounting Type	Rds On (Max)	Package Length	Package Width	Channel Count	Configuration	Configuration - Features	Technology	Drain to Source Voltage (Vdss)	FET Feature	Vgs(th) (Max)	Power - Max (Ta)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Ta) (2)
INFINEON IRF9910TR	10 A	12 A	2 VA	-55 °C	150 °C	900 pF	11 nC	8-SO 8-SOIC	Surface Mount	13.4 mOhm	0.154 in	3.9 mm	2	N-Channel	Dual	MOSFET (Metal Oxide)	20 V	Logic Level Gate	2.55 V
INFINEON IRF9910TRPBF-1				-55 °C	150 °C	900 pF 1860 pF	11 nC	8-SOIC	Surface Mount	9.3 mOhm 13.4 mOhm	0.154 in	3.9 mm	2	N-Channel	Dual	MOSFET (Metal Oxide)	20 V		2.55 V	2 W	10 A	12 A
INFINEON IRF9910TRPBF	10 A	12 A	2 VA	-55 °C	150 °C	900 pF	11 nC	8-SO 8-SOIC	Surface Mount	9.3 mOhm	0.154 in	3.9 mm	2	N-Channel	Dual	MOSFET (Metal Oxide)	20 V	Logic Level Gate	2.55 V
INFINEON IRF9910PBF	10 A	12 A	2 VA	-55 °C	150 °C	900 pF	11 nC	8-SO 8-SOIC	Surface Mount	13.4 mOhm	0.154 in	3.9 mm	2	N-Channel	Dual	MOSFET (Metal Oxide)	20 V	Logic Level Gate	2.55 V
INFINEON IRF9910	10 A	12 A	2 VA	-55 °C	150 °C	900 pF	11 nC	8-SO 8-SOIC	Surface Mount	13.4 mOhm	0.154 in	3.9 mm	2	N-Channel	Dual	MOSFET (Metal Oxide)	20 V	Logic Level Gate	2.55 V

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