Specification	SI4447DY-T1-E3

Current - Continuous Drain (Id) (Ta)	3.3 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	5 V, 15 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	14 nC
Input Capacitance (Ciss) (Max)	805 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.1 W
Rds On (Max)	72 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max)	2.2 V

SI4447 Series

Part	Gate Charge (Max)	Package Name	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Drain to Source Voltage (Vdss)	Package Length	Package Width	Vgs(th) (Max)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI4447ADY-T1-GE3	38 nC	8-SOIC	970 pF	10 V	4.5 V	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	40 V	0.154 in	3.9 mm	2.5 V	P-Channel	20 V	7.2 A	4.2 W	45 mOhm
Vishay Dale SI4447DY-T1-E3	14 nC	8-SOIC	805 pF	10 V	5 V 15 V	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	40 V	0.154 in	3.9 mm	2.2 V	P-Channel	16 V		1.1 W	72 mOhm	3.3 A

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