Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TIP122 | TIP122 Series |
|---|---|---|
| - | - | |
| Current - Collector (Ic) (Max) | 5 A | 5 A |
| Current - Collector Cutoff (Max) [Max] | 500 çA | 500 çA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 hFE | 1000 hFE |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature | 150 °C | 150 °C |
| Package / Case | TO-220-3 | TO-220-3 |
| Power - Max [Max] | 2 W | 2 W |
| Supplier Device Package | TO-220 | TO-220 |
| Vce Saturation (Max) @ Ib, Ic | 4 V | 4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
TIP122 Series
Low voltage NPN power Darlington transistor
| Part | Mounting Type | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Power - Max [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics TIP122 | ||||||||||
STMicroelectronics TIP122 | ||||||||||
STMicroelectronics TIP122 | ||||||||||
STMicroelectronics TIP122 | Through Hole | 500 çA | TO-220 | 5 A | 100 V | 150 °C | 4 V | 1000 hFE | 2 W | TO-220-3 |
Description
General part information
TIP122 Series
The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Documents
Technical documentation and resources