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PBHV8540T-QR

PBHV8540T-QR

Active
Nexperia USA Inc.

500 V, 0.5 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

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PBHV8540T-QR

PBHV8540T-QR

Active
Nexperia USA Inc.

500 V, 0.5 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

Find alt

Description

General part information

PBHV8540T-Q Series

NPN high-voltage low VCEsattransistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

Technical Specifications

Parameters and characteristics for this part

SpecificationPBHV8540T-QR
Current - Collector (Ic) (Max)500 mA
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)100
Frequency - Transition30 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameTO-236AB
Power - Max300 mW
QualificationAEC-Q101
Transistor TypeNPN
Vce Saturation (Max)250 mV
Voltage - Collector Emitter Breakdown (Max)400 V

Pricing

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CAD

3D models and CAD resources for this part