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DMNH4006SK3-13 - TO-252-2

DMNH4006SK3-13

Active
Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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DMNH4006SK3-13 - TO-252-2

DMNH4006SK3-13

Active
Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMNH4006SK3-13
Current - Continuous Drain (Id) @ 25°C90 A, 18 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]51 nC
Input Capacitance (Ciss) (Max) @ Vds2280 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)2.2 W
Rds On (Max) @ Id, Vgs6 mOhm
Supplier Device PackageTO-252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.57
Digi-Reel® 1$ 2.57
Tape & Reel (TR) 2500$ 0.74
5000$ 0.73

Description

General part information

DMNH4006SPSQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.

Documents

Technical documentation and resources