SSM6K513NU,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 15A 6UDFNB

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 15A 6UDFNB

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6K513NU,LF

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1130 pF
Mounting Type	Surface Mount
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	8.9 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs (Max)	Mounting Type	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM6K513NU,LF	4.5 V 10 V	8.9 mOhm	30 V	1130 pF	1.25 W	15 A	7.5 nC	MOSFET (Metal Oxide)	20 V	Surface Mount	N-Channel	6-UDFNB (2x2)	2.1 V

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General part information

N-Channel 30 V 15A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)

Technical documentation and resources