Trans MOSFET P-CH 20V 0.5A 3-Pin SOT-883 T/R

PMZ950UPEYL

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Nexperia USA Inc.

TRANSISTOR: P-MOSFET; TRENCH; UNIPOLAR; -20V; -300MA; IDM: -2A; ESD

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PMZ950UPEYL

Active

Nexperia USA Inc.

TRANSISTOR: P-MOSFET; TRENCH; UNIPOLAR; -20V; -300MA; IDM: -2A; ESD

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMZ950UPE Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMZ950UPEYL

Current - Continuous Drain (Id) (Ta)	500 mA
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Gate Charge (Max)	2.1 nC
Input Capacitance (Ciss) (Max)	43 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-101, SOT-883
Package Name	SOT-883
Power Dissipation (Max)	360 mW, 2.7 W
Rds On (Max)	1.4 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	950 mV

PMZ950UPE Series

20 V, P-channel Trench MOSFET

Part	Vgs (Max)	FET Type	Technology	Rds On (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Package Name	Current - Continuous Drain (Id) (Ta)	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Gate Charge (Max)	Vgs(th) (Max)
Nexperia USA Inc. PMZ950UPEYL	8 V	P-Channel	MOSFET (Metal Oxide)	1.4 Ohm	2.7 W 360 mW	43 pF	SOT-883	500 mA	SC-101 SOT-883	20 V	-55 °C	150 °C	Surface Mount	2.1 nC	950 mV